Product Description:
The TOSHIBA TLP504A and TLP504A−2 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package.
| Channels |
|
2 |
| Collector-emitter breakdown voltage |
|
55 V |
| Collector-emitter breakdown voltage max. |
|
55 V |
| Insulation voltage |
|
2500 Vrms |
| Package |
|
DIL-8 |
| Operating temperature |
|
-55 to +100 °C |
| Approvals |
|
UL |
| Current transfer ratio |
|
50 to 600 % |
| Input forward current |
|
50 mA |
| Collector current |
|
50 mA |
